NDLI: Fabrication, Modeling, and Characterization of High-Aspect-Ratio Coplanar Waveguide

Content Provider	IEEE Xplore Digital Library
Author	Todd, S.T. Huang, X.T. Bowers, J.E. MacDonald, N.C.
Copyright Year	1963
Abstract	A silicon micromachining process has been developed to fabricate high-aspect-ratio coplanar waveguide (hicoplanar). A new closed-form analytical transmission line model that is valid for both conventional coplanar waveguide (CPW) and hicoplanar is introduced and compared with simulations and experimental results. The major novelties of the model are that it includes the effect of the conductor height on the output parameters and combines Wheeler's inductance rule and perturbation theory to predict the line resistance. Transmission lines with characteristic impedances of 18-25 Ω have been fabricated on high-resistivity silicon. Attenuation was measured to be 2.4-3.4 dB/cm at 30 GHz before silicon removal and 1.7-2.4 dB/cm at 30 GHz after silicon removal. The analytical model is compared with Ansoft High Frequency Structure Simulator simulations and experimental data and shows excellent agreement.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	3790
Ending Page	3800
Page Count	11
File Size	1580100
File Format	PDF
ISSN	00189480
Volume Number	58
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Conductors Coplanar waveguides Power transmission lines Silicon Microstrip Substrates Impedance RF CMOS Coplanar waveguides (CPWs) high aspect ratio microelectromechanical systems (MEMS) micromachining transmission lines
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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