NDLI: Self-Consistent Analysis of Quantum Well Number Effects on the Performance of 2.3- <formula formulatype=inline><tex Notation=TeX>$mu$</tex></formula>m GaSb-Based Quantum Well Laser Diodes

Content Provider	IEEE Xplore Digital Library
Author	Salhi, A. Al-Muhanna, A.A.
Copyright Year	1995
Abstract	We self-consistently analyze the effect of quantum well (QW) number on the performance of semiconductor lasers based on GaSb material emitting at 2.3 mum. The analysis is performed with commercial software that combines gain calculation with 2-D simulations of carrier transport and wave guiding. The laser model implemented in the software was calibrated using experimental results. Excellent agreement between simulation and experimental results was achieved. The calibrated model was then used to simulate the performance of these lasers as a function of the number of QWs. The analysis includes the cavity length dependence of the threshold current density, the characteristic temperature, and the emitted optical power reduction at a constant current with increasing temperature. Our simulation shows that the transparency current density and the gain parameter increase with a rate of ~16 A/cm² and 6.82 cm^-1 per QW, respectively. The internal loss is mainly due to free carrier in the p-type layers. The simulation shows that the optimum number of QWs for the characteristic temperature, threshold current, and optical power reduction depends strongly on the cavity length.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	918
Ending Page	924
Page Count	7
File Size	308683
File Format	PDF
ISSN	1077260X
Volume Number	15
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Image analysis Performance analysis Laser modes Temperature dependence Gas lasers Quantum well lasers Semiconductor lasers Threshold current Optical materials Semiconductor materials semiconductor lasers Quantum well (QW) lasers semiconductor device modeling
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Self-Consistent Analysis of GaInNAsSb/GaSb Quantum Well Lasers Emitting at 2.3–3.3-μm -Long Wavelength

2.7-$mu$ m GaSb-Based Diode Lasers With Quinary Waveguide

Influence of GaSb and AlGaInAsSb as Barrier Material on $sim$2.8-$mu$m GaSb-Based Diode Laser Properties

Laser Diodes for Gas Sensing Emitting at 3.06 $mu$m at Room Temperature

Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-$mu$ m Wavelength Range

GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 $mu$ m

Threshold current density reduction of strained AlInGaAs quantum-well laser

Room-temperature 2.81-/spl mu/m continuous-wave operation of GaInAsSb-AlGaAsSb laser

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$mu{hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers

Self-Consistent Analysis of Quantum Well Number Effects on the Performance of 2.3- $mu$m GaSb-Based Quantum Well Laser Diodes

Similar Documents

Self-Consistent Analysis of GaInNAsSb/GaSb Quantum Well Lasers Emitting at 2.3–3.3-μm -Long Wavelength

2.7-$mu$ m GaSb-Based Diode Lasers With Quinary Waveguide

Influence of GaSb and AlGaInAsSb as Barrier Material on $sim$2.8-$mu$m GaSb-Based Diode Laser Properties

Laser Diodes for Gas Sensing Emitting at 3.06 $mu$m at Room Temperature

Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-$mu$ m Wavelength Range

GaSb-Based Semiconductor Disk Laser With 130-nm Tuning Range at 2.5 $mu$ m

Threshold current density reduction of strained AlInGaAs quantum-well laser

Room-temperature 2.81-/spl mu/m continuous-wave operation of GaInAsSb-AlGaAsSb laser

Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$mu{hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers

Self-Consistent Analysis of Quantum Well Number Effects on the Performance of 2.3- $mu$m GaSb-Based Quantum Well Laser Diodes