NDLI: Electromigration and failure in electronics: An introduction

Content Provider	IEEE Xplore Digital Library
Author	d'Heurle, F.M.
Copyright Year	1963
Abstract	Some fundamental aspects of electromigration phenomena as they have been studied in "bulk" metallic conductors are reviewed. In an electric field atoms are subjected to a force due to the field, and to a force which results from the motion of electrical carriers, electrons, or holes. In bulk samples, and at high temperatures, these forces cause the displacement of atoms by a lattice mechanism which is also responsible for the diffusion of atoms in a concentration gradient. In thin films, electromigration has been found to occur at lower temperatures (and higher current densities) by a grain boundary diffusion mechanism. Electromigration may cause failures at material discontinuities, such as found at terminals, at temperature gradients, or at structural inhomogeneities. The process of crack formation, as observed in aluminum thin films, is described. Failure times are a function of the activation energy for diffusion and of exponents of the current density which vary for different failure modes. The effects of film purity, orientation, grain size, glass overcoat, and solute additions on lifetime are reviewed. Practical guidelines for the design of thin-film interconnections, and for the interpretation of accelerated test data are given.
Sponsorship	IEEE Publication
Starting Page	1409
Ending Page	1418
Page Count	10
File Size	2346521
File Format	PDF
ISSN	00189219
Volume Number	59
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1971-10-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electromigration Temperature Transistors Current density Conductors Charge carrier processes Lattices Grain boundaries Aluminum Grain size
Content Type	Text
Resource Type	Article
Subject	Computer Science Electrical and Electronic Engineering

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