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Content Provider | IEEE Xplore Digital Library |
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Author | Kaija, T. Ristolainen, E.O. |
Copyright Year | 1963 |
Abstract | An improved model for ground-shielded (GS) test fixtures is proposed. The proposed model provides more accurate device-under-test gap behavioral model than previous test-fixture models and takes into account the impedance of the ground return path. The new model is validated up to 25 GHz by comparing the model simulations with experimental measurements. The proposed model is applied to bulk-silicon- and sapphire-based GS test fixtures with different layouts. Furthermore, a large phase shift in the shield-based test-fixture forward transmission is reported in this study. Based on the results achieved, suggestions for deembedding method selection are given. Test fixtures were fabricated using a 0.35-/spl mu/m CMOS process and 0.5-/spl mu/m silicon-on-sapphire CMOS process. |
Sponsorship | IEEE Microwave Theory and Techniques Society |
Starting Page | 82 |
Ending Page | 87 |
Page Count | 6 |
File Size | 386784 |
File Format | |
ISSN | 00189480 |
Volume Number | 54 |
Issue Number | 1 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2006-01-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Semiconductor device modeling Testing Fixtures Radio frequency CMOS process Semiconductor device measurement Silicon on insulator technology Probes Insulation Impedance silicon-on-insulator (SOI) technology Microwave measurements modeling RF CMOS semiconductor device measurements |
Content Type | Text |
Resource Type | Article |
Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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