NDLI: MOSFET hand analysis using BSIM

Content Provider	IEEE Xplore Digital Library
Author	Brews, J.R.
Copyright Year	1988
Abstract	This article describes the set-up of the Liu small-signal circuit for hand analysis of circuits using MOSFETs with BSIM models, Liu's circuit differs from standard textbook circuits in the use of a complex-valued transconductance and does not make the common, but inaccurate, simplification of neglecting the output drain-to-body capacitance. BSIM and Liu's circuit agree completely for the frequency response of a common-source amplifier. This example shows that Liu's complex transconductance is essential to find the correct corner frequency. The complex transconductance provides the same corner frequency regardless of the value selected for the BSIM parameter XPART, which is not true of a circuit with a real transconductance. The value selected for XPART affects somewhat the higher frequency pole of this amplifier, and affects radically the high frequency zero. As a result, uncertainty in the value of XPART translates directly into uncertainty in the high frequency response, and a corresponding uncertainty in design.
Starting Page	28
Ending Page	36
Page Count	9
File Size	1955093
File Format	PDF
ISSN	87553996
Volume Number	21
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-01-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits SPICE Analytical models Circuit simulation MOS devices Debugging Error analysis FETs Transconductance Resistors
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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