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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Knulst, W. Luiten, J. Verhoeven, J. |
| Copyright Year | 1995 |
| Abstract | Compact narrow-band high-brightness soft X-ray sources based on the Cherenkov effect are very promising. We discuss the theoretical basis for this novel electron-accelerator-based source. We present results of experiments, which confirm the theoretical expectations and demonstrate that intense narrow-band Cherenkov light can be produced at the silicon L-edge (99.7 eV) and, in the water window, at the titanium L-edge (453 eV) and the vanadium L-edge (512 eV). On the basis of theory and experiment, we show that a compact high-brightness Cherenkov source may be realized, which fulfills the requirements for practical soft X-ray microscopy and photoelectron spectroscopy. |
| Sponsorship | IEEE Lasers and Electro-Optics Society |
| Starting Page | 1414 |
| Ending Page | 1425 |
| Page Count | 12 |
| File Size | 465645 |
| File Format | |
| ISSN | 1077260X |
| Volume Number | 10 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Plasma sources Ultraviolet sources Plasma x-ray sources Plasma applications Fluorescence Gas lasers Optical pulse generation Narrowband Silicon Photoelectron microscopy X-ray microscopy Cherenkov effect extreme ultraviolet (EUV) photoelectron spectroscopy soft X-rays |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering |
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