NDLI: Submillimeter-wave InP Gunn devices

Content Provider	IEEE Xplore Digital Library
Author	Eisele, H. Kamoua, R.
Copyright Year	1963
Abstract	Recent advances in design and technology significantly improved the performance of low-noise InP Gunn devices in oscillators first at D-band (110-170 GHz) and then at W-band (75-110 GHz) frequencies. More importantly, they next resulted in orders of magnitude higher RF output power levels above D-band and operation in a second-harmonic mode up to at least 325 GHz. Examples of the state-of-the-art performance are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3.5 mW at 300 GHz, and more than 2 mW at 315 GHz. The dc power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Two different types of doping profiles, a graded profile and one with a doping notch at the cathode, are prime candidates for operation at submillimeter-wave frequencies. Generation of significant RF power levels from InP Gunn devices with these optimized doping profiles is predicted up to at least 500 GHz and the performance predictions for the two different types of doping profiles are compared.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	2371
Ending Page	2378
Page Count	8
File Size	406180
File Format	PDF
ISSN	00189480
Volume Number	52
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Gunn devices Radio frequency Doping profiles Oscillators Millimeter wave technology Gallium arsenide Frequency measurement Power generation Phase noise
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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