NDLI: A new regime for operating capacitive micromachined ultrasonic transducers

Content Provider	IEEE Xplore Digital Library
Author	Bayram, B. Haeggstrom, E. Yaralioglu, G.G. Khuri-Yakub, B.T.
Copyright Year	1986
Abstract	We report on a new operation regime for capacitive micromachined ultrasonic transducers (cMUTs). Traditionally, cMUTs are operated at a bias voltage lower than the collapse voltage of their membranes. In the new proposed operation regime, first the cMUT is biased past the collapse voltage. Second, the bias voltage applied to the collapsed membrane is reduced without releasing the membrane. Third, the cMUT is excited with an ac signal at the bias point, keeping the total applied voltage between the collapse and snapback voltages. In this operation regime, the center of the membrane is always in contact with the substrate. Our finite element methods (FEM) calculations reveal that a cMUT operating in this new regime, between collapse and snapback voltages, possesses a coupling efficiency (k/sub T//sup 2/) higher than a cMUT operating in the conventional regime below its collapse voltage. This paper compares the simulation results of the coupling efficiencies of cMUTs operating in conventional and new operation regimes.
Starting Page	1184
Ending Page	1190
Page Count	7
File Size	854250
File Format	PDF
ISSN	08853010
Volume Number	50
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ultrasonic transducers Voltage Biomembranes Electrodes Finite element methods Silicon Electrostatics High K dielectric materials High-K gate dielectrics Power conversion
Content Type	Text
Resource Type	Article
Subject	Acoustics and Ultrasonics Instrumentation Electrical and Electronic Engineering

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