NDLI: AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications

Content Provider	IEEE Xplore Digital Library
Author	Younkyu Chung Hang, C.Y. Cai, S. Yongxi Qian Wen, C.P. Wang, K.L. Itoh, T.
Copyright Year	1963
Abstract	A high-efficiency and compact AlGaN/GaN heterojunction field-effect transistor (HFET) power amplifier integrated with a microstrip antenna at 7.25 GHz is presented for RF front-end circuit applications. A microstrip circular sector antenna is employed as both a radiator and frequency-dependent output load. Higher order harmonics from the HFET in nonlinear operation are reactively terminated because of the harmonic termination characteristic of the antenna. Based on the optimum load impedance measured by a load-pull measurement setup, the AlGaN/GaN HFET power amplifier has been designed and fabricated at 7.25 GHz using the active integrated antenna concept. In this design approach, the measured antenna impedance is directly transformed to the optimum load impedance for maximum efficiency. The power amplifier with 1-mm gate periphery shows 42% peak power-added efficiency and 30.3-dBm saturated output power with a linear gain of 8 dB, which is in reasonably good agreement with measured discrete HFET load-pull data. Due to the antenna's characteristics, better than 30-dB harmonic suppression has been achieved at both the second and third harmonic frequencies in both the E- and H-planes. To the authors' best knowledge, this is the first demonstration of a high-frequency AlGaN/GaN HFET power amplifier integrated with an antenna.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	653
Ending Page	659
Page Count	7
File Size	635148
File Format	PDF
ISSN	00189480
Volume Number	51
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microstrip antennas Aluminum gallium nitride Gallium nitride HEMTs MODFETs Power amplifiers Radiofrequency amplifiers Radio frequency Antenna measurements Loaded antennas
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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