NDLI: Er-doped AlGaAs native oxides: photoluminescence characterization and process optimization

Content Provider	IEEE Xplore Digital Library
Author	Leigang Kou Hall, D.C. Strohhofer, C. Polman, A. Tong Zhang Kolbas, R.M. Heller Jr., R.D. Dupuis, R.D.
Copyright Year	1995
Abstract	We present 300 K photoluminescence (PL) characterization data for wet thermal native oxides of Al/sub 0.58/Ga/sub 0.42/As films grown by metal organic chemical vapor deposition and doped with Er via multiple high-energy ion implants (for 0.0675, 0.135, and 0.27 atomic percent (at.%) peak Er concentrations), and Al/sub 0.5/Ga/sub 0.5/As and Al/sub 0.8/In/sub 0.2/As films doped with Er (0.03-0.26 at.%) during molecular beam epitaxy crystal growth. Broad spectra with a /spl sim/50-nm full-width at half-maximum and a PL peak at 1.534 /spl mu/m are observed, characteristic of Al/sub 2/O/sub 3/:Er films. The dependencies of PL intensity, spectra, and lifetime on annealing temperature (675/spl deg/C-900/spl deg/C), time (2-60 min) and As overpressure (0-0.82 atm) are studied to optimize the annealing process, with As considered as a possible quenching mechanism. Wet and dry-oxidized films are compared to explore the role of hydroxyl (OH) groups identified by Fourier transform infrared (FTIR) spectroscopy. FTIR experiments employing heavy water (D/sub 2/O) suggest that OH groups in wet oxidized AlGaAs come mainly from post-oxidation adsorption of atmospheric moisture. AlGaAs:Er films wet oxidized with 0.1% O/sub 2/ added to the N/sub 2/ carrier gas show a fourfold PL intensity increase, doubled PL lifetime to /spl tau//spl sim/5.0 ms (0.27 at.% implanted sample), and the lowest degree of concentration quenching.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	880
Ending Page	890
Page Count	11
File Size	349113
File Format	PDF
ISSN	1077260X
Volume Number	8
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photoluminescence Erbium Annealing Infrared spectra Organic chemicals Chemical vapor deposition Implants Atomic beams Atomic layer deposition Molecular beam epitaxial growth
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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