NDLI: Noise model of InP-InGaAs SHBTs for RF circuit design

Content Provider	IEEE Xplore Digital Library
Author	Huber, A. Huber, D. Bergamaschi, C. Morf, T. Jackel, H.
Copyright Year	1963
Abstract	A scalable small-signal and noise model of InP-InGaAs single heterojunction bipolar transistors was developed. Effects which become important at higher frequencies such as the correlation between base and collector current noise and frequency-dependent base current noise are taken into account. We will show that these effects are significant at frequencies higher than 40 GHz and can no longer be neglected. Our model also includes the effects of the different emission coefficients of the base and collector currents. Using this improved model, a direct-coupled, lumped broad-band amplifier was designed. We completely characterized the fabricated circuit with respect to small-signal, noise, and linearity behavior. A -3-dB bandwidth of 50 GHz with a dc gain of 9.8 dB and a gain-peaking of only 1.2 dB were achieved. All these values agree very well with the simulation results. The noise figure is 7.5 dB over a large frequency range. In the frequency range from 2 to 50 GHz, the third-order intercept point IP/sub 3/ and 1-dB compression point at the output have values from 17 to 10 dBm and 3 to 0 dBm, respectively.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1675
Ending Page	1682
Page Count	8
File Size	339030
File Format	PDF
ISSN	00189480
Volume Number	50
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Circuit noise Radio frequency Circuit synthesis Semiconductor device noise Heterojunction bipolar transistors Low-frequency noise HEMTs MODFETs Laboratories Linearity
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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