NDLI: InAsP cells for solar thermophotovoltaic applications

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InAsP cells for solar thermophotovoltaic applications

Content Provider	IEEE Xplore Digital Library
Author	Chen Zhen Brandhorst Jr., H.W. Well, B.K.
Copyright Year	1986
Abstract	High temperature wide band gap InAsP cells have been specifically designed and fabricated for operating temperatures up 250/spl deg/C to match with selective emitters operating near 1 /spl mu/m in a TPV system. An important assumption is that the emitters can be heated up to the range of 1400 K to 2000 K by either solar concentrators or some other heat source. The efficiency of a selective emitter, which can be selected depending on the emitter operating temperatures, will be significantly higher than either a blackbody or a graybody emitter. The key for the TPV success is that the match between the band gap and selective emission must occur at the cell operating temperature. An appropriate cell band gap needs to be carefully selected; so when the band gap shrinks at the operating temperature, the desired match can be achieved. In this paper, two types of InAsP cells were investigated for this concept. The performance of these cells at elevated temperature and energy conversion efficiency are reported in this paper.
Starting Page	39
Ending Page	43
Page Count	5
File Size	425830
File Format	PDF
ISSN	08858985
Volume Number	16
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap Solar heating Wideband Temperature dependence Energy conversion
Content Type	Text
Resource Type	Article
Subject	Aerospace Engineering Electrical and Electronic Engineering Space and Planetary Science

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