NDLI: New design method of uniform and nonuniform distributed power amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Duperrier, C. Campovecchio, M. Roussel, L. Lajugie, M. Quere, R.
Copyright Year	1963
Abstract	A new design methodology of uniform and nonuniform distributed power amplifiers is reported in this paper. This method is based on analytical expressions of the optimum input and output artificial lines making up the uniform and nonuniform distributed architectures. These relationships are derived from the load-line requirement of each transistor size for optimum power operation. Furthermore, specific design criteria are presented to enable an efficient choice between uniform and nonuniform distributed architectures. To validate this new design methodology, a nonuniform distributed power amplifier has been manufactured at the TriQuint Semiconductor Foundry, Richardson, TX, using a 0.25-/spl mu/m power pseudomorphic high electron-mobility process. This single-stage monolithic-microwave integrated-circuit amplifier is made of six nonuniform cells and demonstrates 1-W output power with 7-dB associated gain and 20% power-added efficiency over a multioctave bandwidth.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	2494
Ending Page	2500
Page Count	7
File Size	229156
File Format	PDF
ISSN	00189480
Volume Number	49
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Design methodology Power amplifiers Distributed amplifiers Semiconductor optical amplifiers High power amplifiers Manufacturing processes Semiconductor device manufacture Foundries PHEMTs Power generation
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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