NDLI: Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs

Content Provider	IEEE Xplore Digital Library
Author	Kamitsuna, H. Matsuoka, Y. Yamahata, S. Shigekawa, N.
Copyright Year	1963
Abstract	This paper presents an ultrahigh-speed InP/InGaAs double-heterostructure phototransistor (DHPT) with a record optical gain cutoff frequency of 82 GHz. This excellent performance originates from the double-heterostructure's compatibility with high-performance double-heterostructure bipolar transistor (DHBT) and a new self-aligned process. To demonstrate the excellent performance of the DHPT, two kinds of optoelectronic MMICs (OEMMICs) were designed and fabricated. One is a 40-GHz-band DHPT/DHBT photoreceiver that shows the DHPT's ability to be simultaneously integrated with a high-performance DHBT. The 40 GHz operation frequency is also the highest reported for monolithically integrated HPT/HBT photoreceivers. The other is a direct optical injection-locked oscillator that can extract an electrical clock signal from optical data streams. The OEMMICs are promising for compact and low-power-consumption optical receivers on an InP platform for millimeter-wave photonics and ultrahigh-speed optical communication systems.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1921
Ending Page	1925
Page Count	5
File Size	160111
File Format	PDF
ISSN	00189480
Volume Number	49
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Indium gallium arsenide Optical receivers Phototransistors Optical recording Cutoff frequency Bipolar transistors MMICs Heterojunction bipolar transistors Injection-locked oscillators
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

InP/InGaAs heterojunction phototransistors for optoelectronic receivers

Optoelectronic mixing, modulation, and injection locking in millimeter-wave self-oscillating InP/InGaAs heterojunction bipolar photo transistors-single and dual transistor configurations

A 60-GHz-Band Optical Injection-Locked Oscillator Using a Top/Back-Illuminated InP/InGaAs HPT

Low frequency noise and microwave properties of InP/InGaAs heterojunction bipolar transistors

Millimetre-wave InGaAs/InP heterojunction bipolar phototransistors

High Speed InP/InGaAs P-n-p Heterojunction Bipolar Transistors

InP/InGaAs heterojunction bipolar phototransistors with improved sensitivity

A 82-GHz-Optical-Gain-Cutoff-Frequency InP/InGaAs Double-Hetero-structure Phototransistor (DHPT) and Its Application to a 40-GHz-Band OEMMIC Photoreceiver

InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers

Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs

Similar Documents

InP/InGaAs heterojunction phototransistors for optoelectronic receivers

Optoelectronic mixing, modulation, and injection locking in millimeter-wave self-oscillating InP/InGaAs heterojunction bipolar photo transistors-single and dual transistor configurations

A 60-GHz-Band Optical Injection-Locked Oscillator Using a Top/Back-Illuminated InP/InGaAs HPT

Low frequency noise and microwave properties of InP/InGaAs heterojunction bipolar transistors

Millimetre-wave InGaAs/InP heterojunction bipolar phototransistors

High Speed InP/InGaAs P-n-p Heterojunction Bipolar Transistors

InP/InGaAs heterojunction bipolar phototransistors with improved sensitivity

A 82-GHz-Optical-Gain-Cutoff-Frequency InP/InGaAs Double-Hetero-structure Phototransistor (DHPT) and Its Application to a 40-GHz-Band OEMMIC Photoreceiver

InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers

Ultrahigh-speed InP/InGaAs DHPTs for OEMMICs