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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cho, H.S. Inturi, V.R. Barnard, J.A. Fujiwara, H. |
| Copyright Year | 1965 |
| Abstract | Stripe domains in FeTaN films were observed by magnetic force microscopy (MFM), and related magnetic and electrical properties of the films were investigated. An abrupt change in M-H loop near saturation was accompanied by sudden disappearance of the stripe domains. For some samples, little change was observed in the domain width and overall shape of the stripe domains did not change during magnetization reversal process. The MFM phase signal had a maximum during magnetization reversal at the applied field close to the coercivity of the film. Electrical measurement also revealed the switching mechanism. Both anisotropic (AMR) and giant magnetoresistance (GMR) effects governed the magnetoresistive characteristics. The resistance of the film measured along the stripe exhibited a minimum, while that in the direction perpendicular to the stripe showed a maximum at around the coercive field during the magnetization reversal process. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 1150 |
| Ending Page | 1152 |
| Page Count | 3 |
| File Size | 498856 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 34 |
| Issue Number | 4 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-07-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Magnetic films Magnetic force microscopy Magnetization reversal Anisotropic magnetoresistance Giant magnetoresistance Electrical resistance measurement Magnetic field measurement Magnetic forces Magnetic anisotropy Perpendicular magnetic anisotropy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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