NDLI: Beating the heat [CMOS hot-carrier reliability]

Content Provider	IEEE Xplore Digital Library
Author	Sugiharto, D.S. Yang, C.Y. Huy Le Chung, J.E.
Copyright Year	1988
Abstract	CMOS hot-carrier reliability at both transistor and circuit levels has been examined. Accurate reliability assessment requires defining suitable criteria for acceptable performance for both circuit and individual transistors. As device designers meet demands for greater speed and more complex circuitry accompanied by shrinking the size of transistor into the deep-submicron regime, they have to contend with increase in current densities and higher electric fields. Though in general a MOSFET's driving capability increases as the channel length decreases, the resulting high field will eventually limit the driving capability of the device. The authors discuss improving CMOS hot-carrier reliability through analysis, modelling and simulation.
Starting Page	43
Ending Page	51
Page Count	9
File Size	2167041
File Format	PDF
ISSN	87553996
Volume Number	14
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-09-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Hot carriers Degradation Circuit simulation Electron traps Impact ionization Hot carrier injection Substrate hot electron injection Threshold voltage Drain avalanche hot carrier injection
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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