NDLI: Transfer characteristic of IM/sub 3/ relative phase for a GaAs FET amplifier

Content Provider	IEEE Xplore Digital Library
Author	Suematsu, N. Iyama, Y. Ishida, O.
Copyright Year	1963
Abstract	The transfer characteristic of relative phase of the third-order intermodulation distortion (IM/sub 3/) of a GaAs FET amplifier is measured and analyzed. The measurement system and method are also described. For drives in the weakly nonlinear region, the measured relative phase of IM/sub 3/ is equal to that of the carrier and is in agreement with the analysis results using Volterra-series representation. For drives in the saturation region, the measured relative phase of IM/sub 3/ versus the input power moves drastically compared with that of the carrier and is in agreement with numerical analysis using discrete Fourier transform. Comparison between measured and analytical results shows the drastic move of IM/sub 3/ relative phase is caused by the generation of IM/sub 3/ due to AM-PM conversion. The measured results and the measurement method are useful for the design and adjustment of predistortion-type linearizers for GaAs FET high-power amplifiers.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	2509
Ending Page	2514
Page Count	6
File Size	165094
File Format	PDF
ISSN	00189480
Volume Number	45
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phase measurement Distortion measurement Gallium arsenide FETs Intermodulation distortion Drives Power measurement Numerical analysis Discrete Fourier transforms High power amplifiers
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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