NDLI: Tunable microwave load based on biased photoinduced plasma in silicon

Content Provider	IEEE Xplore Digital Library
Author	Boyer, B. Haidar, J. Vilcot, A. Bouthinon, M.
Copyright Year	1963
Abstract	The frequency tuning of a quarter-wave resonator using an optoelectronic control is reported. Sharp notch characteristics with a small decibel-insertion loss and tunable frequency with matching better than 45 dB are obtained by varying both the optical power and the DC bias. The measured frequency shift is more than 60% below the dark resonant frequency and is carried out without altering the shape of the response. The biased photoinduced plasma (BPP) loading the open terminated microstrip line is then analyzed by comparing microwave simulations and measurements. The deduced complex load equivalent to this biased photoinduced plasma is then confirmed by semiconductor simulations. Results show the great possibilities offered by this BPP load (BPPL), which can be easily and widely tuned by means of a simple optoelectronic control. The frequency bandwidth of tuning is limited by the geometrical parameters and may be extended to millimeter-wave operation.
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1362
Ending Page	1367
Page Count	6
File Size	139398
File Format	PDF
ISSN	00189480
Volume Number	45
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma measurements Plasma simulation Optical resonators Shape measurement Plasma properties Optical tuning Optical losses Frequency measurement Resonant frequency Microstrip
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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