NDLI: Modeling of plasma-etch processes using well stirred reactor approximations and including complex gas-phase and surface reactions

Content Provider	IEEE Xplore Digital Library
Author	Meeks, E. Jong Won Shon
Copyright Year	1973
Abstract	A 0-D or well stirred reactor model determines spatially and time-averaged species composition in plasma-etch reactors, through solution of species, mass, and electron-energy balance equations. The use of well stirred reactor approximations reduces the computational expense of detailed kinetics calculations and allows investigation of the dependence of plasma chemistry on etch-process parameters. The reactor is characterized by a chamber volume, surface area, net mass flow or residence time, pressure, energy loss to surroundings, power deposition, and inlet-gas composition. The electron-energy equation includes a detailed power balance with losses to ions and electrons through the sheath, as well as inelastic and elastic collision losses. The model employs reaction-rate coefficients for electron-impact reactions, which require an assumption of the electron energy distribution function (EEDF). We compare model results using Maxwellian EEDF's, as well as reaction-rate coefficients determined as a function of average electron energy through solution of the Boltzmann equation, for chlorine chemistry. The Boltzmann rates are determined by time-lagging the equilibration of electrons with applied electric fields. The Maxwellian reaction rates give higher ionization fractions than the Boltzmann rates, affecting the predicted electronegativity and positive ion composition for chlorine plasmas. The model also shows a strong sensitivity of the plasma composition to the assumed surface-recombination probability of atomic chlorine.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	539
Ending Page	549
Page Count	11
File Size	1099450
File Format	PDF
ISSN	00933813
Volume Number	23
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Inductors Plasma chemistry Plasma applications Electrons Kinetic theory Etching Energy loss Maxwell equations Distribution functions Boltzmann equation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

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