NDLI: Time-resolved impact ionization in ZnSe high-voltage switches

Content Provider	IEEE Xplore Digital Library
Author	Elezzabi, A.Y. Houtman, H. Meyer, J.
Copyright Year	1973
Abstract	Fast electrical streamer and glow avalanches in ZnSe semiconductors are investigated, for applications in fast spontaneous or triggered switches. We present time-resolved observations of these self-sustained, impact ionization events in bulk polycrystalline ZnSe at room temperature. Under high voltages (/spl sim/20 kV) short-current pulse (/spl sim/3 ns) electrical excitation, the 1 ns risetime current pulses cause the emission of the bandgap radiation, which in turn is used to characterize the role of the plasma during the switching interval. Using a picosecond resolution streak camera, plasma streamers were recorded, in undoped ZnSe, and a uniform glow was observed in n-doped samples for the duration of the 3 ns, 1 kA current pulse. This paper concerns the behavior of the avalanche breakdown mechanism, which is relevant for applications in high energy switches, and we will discuss the possibility of using the avalanche process to pump high-power light-emitting semiconductor devices.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	1043
Ending Page	1048
Page Count	6
File Size	599066
File Format	PDF
ISSN	00933813
Volume Number	22
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Impact ionization Zinc compounds Switches Plasma temperature Voltage Photonic band gap Energy resolution Cameras Plasma applications Avalanche breakdown
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

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