NDLI: Novel 18/36 GHz (M)MIC GaAs FET frequency doublers in CPW-techniques under the consideration of the effects of coplanar discontinuities

Content Provider	IEEE Xplore Digital Library
Author	Abdo-Tuko, M. Naghed, M. Wolff, I.
Copyright Year	1963
Abstract	The design and performance of single-device and balanced versions of (M)MIC GaAs FET frequency doublers from 18 GHz to 36 GHz, fabricated in purely coplanar waveguide techniques, are presented. Coplanar discontinuities which are usually neglected are taken into consideration in the analysis and design. Spiral inductors and their associated parasitic capacitance are used for impedance matching and phase shifting purposes. The simulation technique used to characterize the spiral inductors is described in detail. Measurement and simulation results show good agreement. The investigated hybrid doublers have a minimum conversion loss of 7 dB while a maximum conversion gain of 6B is predicted for the monolithic version of the doublers. They are fabricated on ceramic and gallium arsenide substrates and are simple, cost effective, and applicable in low and medium power transmitter/receiver systems.<>
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1307
Ending Page	1315
Page Count	9
File Size	840991
File Format	PDF
ISSN	00189480
Volume Number	41
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide FETs Frequency Spirals Inductors Coplanar waveguides Parasitic capacitance Impedance matching Ceramics Costs
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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