NDLI: Microwave performance of InGaAs/InAlAs/InP SISFETs

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Microwave performance of InGaAs/InAlAs/InP SISFETs

Content Provider	IEEE Xplore Digital Library
Author	Feuer, M.D. Kuo, J.M. Shunk, S.C. Behringer, R.E. Chang, T.-Y.
Copyright Year	1980
Abstract	Microwave S-parameter measurements and equivalent-circuit modeling of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP semiconductor-insulator-semiconductor FETs (SISFETs) of 1.1- mu m gate length are discussed. The devices incorporated wide-bandgap buffers, self-aligned contact implants, and refractory air-bridge gates. Their DC I-V characteristics displayed sharp pinchoff, good output conductance of 10-20 mS/ss, and extrinsic transconductance up to 220 ms/mm at room temperature. The maximum unity-current-gain frequency was 27 GHz. Gate resistance was found to be the dominant factor limiting microwave power gain.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	162
Ending Page	164
Page Count	3
File Size	290351
File Format	PDF
ISSN	07413106
Volume Number	9
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Indium compounds Indium phosphide Microwave measurements Length measurement FETs Implants Transconductance Temperature Frequency
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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