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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jou, C.F. Lam, W.W. Chen, H.Z. Stolt, K.S. Luhmann Jr., N.C. Rutledge, D.B. |
| Copyright Year | 1963 |
| Abstract | Monolithic diode grid were fabricated on 2-cm/sup 2/ gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5% and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 Omega , the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.< |
| Sponsorship | IEEE Microwave Theory and Techniques Society |
| Starting Page | 1507 |
| Ending Page | 1514 |
| Page Count | 8 |
| File Size | 737009 |
| File Format | |
| ISSN | 00189480 |
| Volume Number | 36 |
| Issue Number | 11 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1988-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Frequency Schottky diodes Millimeter wave circuits Varactors Lighting Power generation Gallium arsenide Circuit testing Equivalent circuits Semiconductor device modeling |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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