NDLI: Design and characteristics for a 4 µm period permalloy bubble device

Content Provider	IEEE Xplore Digital Library
Author	Yamagishi, K. Yanase, T. Amatsu, M. Inoue, H. Orihara, S.
Copyright Year	1965
Abstract	We have developed a 4 μm period permalloy bubble propagation track, after confirming wide gap tolerance of an 8 μm period wide gap pattern reported by Bobeck et al. From the results obtained in the design and fabrication optimization of a 4 μm period permalloy track, good performance has been obtained with the following conditions: 1.3 μm bubbles, a pattern design with a wide "leg" and an "arm" of moderate length, permalloy film thickness of 3000 Å, appropriate crystal orientation and direction of DC in-plane holding field, ion implantation for hard-bubble suppression with 5 × 10¹³Ne+/cm²at 50 keV, and garnet-to-permalloy spacing of 1600 Å. Using these conditions, a 30 kbit chip has been designed and tested. Dual spacing has been introduced for chip fabrication. The major line propagation and the function operations characterized with 100 kHz triangular wave drive are found to have good performance almost the same as that of our 1 megabit device. The overall bias margin range of 20 Oe at a drive field of 65 Oe with 100 kHz triangular wave has been obtained with 10 consecutive pages.
Sponsorship	IEEE Magnetics Society
Starting Page	1853
Ending Page	1858
Page Count	6
File Size	872800
File Format	PDF
ISSN	00189464
Volume Number	19
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Potential well Magnetic field measurement Testing Shape Garnet films
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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