NDLI: Trimming the critical current of Josephson junctions

Content Provider	IEEE Xplore Digital Library
Author	Pei, S. Fulton, T. Dunkleberger, L. Keane, R.
Copyright Year	1965
Abstract	We have demonstrated the feasibility of trimming the critical current of Josephson tunnel junctions by doping the lead alloy counter electrodes. The critical current may be changed by more than a factor of six, while retaining the quality of the current-voltage characteristics and the critical current uniformity. For junctions with PbSb counter electrodes doped with less than 0.2 nm of Sn, the increase of critical current is stable after proper annealing and depends linearly on the dosage. For dosages heavier than 0.25 nm, the increase of critical current saturates at ∼ 500%. These changes may be explained by the conversion of some oxide at the interface between the counter electrode and the tunneling barrier to the oxide of the dopant. The modification of the height and thickness of the tunneling barrier changes the critical current of the junction.
Sponsorship	IEEE Magnetics Society
Starting Page	820
Ending Page	822
Page Count	3
File Size	306417
File Format	PDF
ISSN	00189464
Volume Number	19
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Critical current Josephson junctions Counting circuits Electrodes Lead Tunneling Doping Current-voltage characteristics Tin Annealing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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