NDLI: Effects of annealing on propagation in ion-implanted contiguous-disk bubble devices

Content Provider	IEEE Xplore Digital Library
Author	Kie Ahn Keefe, G.
Copyright Year	1965
Abstract	Bubble propagation margins are found to be affected by heat treatment in ion-implanted contiguous-disk devices fabricated on liquid-phase epitaxial (LPE) grown double-layer garnet films which support 1-μm bubbles. When an optical reflector is deposited directly on the driving layer interfacial diffusion takes place, and this raises the coercivity of the implanted layer, which in turn causes a severe degradation of propagation margins. In samples fabricated with optical reflectors isolated from the driving layer, the adverse effects of annealing on propagation margins are stronger in close-packed minor loops due to interaction of long-range charged walls as compared with isolated loops and isolated disks, and they cease to propagate bubbles after annealing in the temperature range of 350-400°C, whereas the loss of margins in the isolated loops and disks are typically less than 30 percent after 600-650°C annealing treatments. Stress gradients caused by the discontinuity in the overlay patterns contribute significantly to the increase of threshold drive field after anealing. The rapid degradation of propagation margins found after annealing in the temperature range of 350-400°C in all samples is caused by reordering of the damaged lattice.
Sponsorship	IEEE Magnetics Society
Starting Page	553
Ending Page	557
Page Count	5
File Size	561674
File Format	PDF
ISSN	00189464
Volume Number	16
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1980-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Optical propagation Optical films Degradation Temperature distribution Heat treatment Garnet films Coercive force Propagation losses Stress
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Effects of annealing on propagation in ion-implanted contiguous-disk bubble devices

Fabrication of contiguous-disk magnetic bubble devices

Ion-implantation conditions and annealing effects for contiguous disk bubble devices

Operating Bias Field Adjustment of Bubble Propagation Tracks on Ion-Implanted Permalloy Hybrid Type Magnetic Bubble Memory Devices

Permalloy stress/magnetostriction effects in bubble devices

Investigations of long-term propagation margins in ion-implanted contiguous-disk bubble devices

Annealing phenomena in ion implanted bubble circuits

Effects of in-plane magnetic field on bubble properties in ion-implanted garnet fims

Operation temperature ranges for ion-implanted bubble devices with 1 µm bubbles

Effects of annealing on propagation in ion-implanted contiguous-disk bubble devices

Similar Documents

Effects of annealing on propagation in ion-implanted contiguous-disk bubble devices

Fabrication of contiguous-disk magnetic bubble devices

Ion-implantation conditions and annealing effects for contiguous disk bubble devices

Operating Bias Field Adjustment of Bubble Propagation Tracks on Ion-Implanted Permalloy Hybrid Type Magnetic Bubble Memory Devices

Permalloy stress/magnetostriction effects in bubble devices

Investigations of long-term propagation margins in ion-implanted contiguous-disk bubble devices

Annealing phenomena in ion implanted bubble circuits

Effects of in-plane magnetic field on bubble properties in ion-implanted garnet fims

Operation temperature ranges for ion-implanted bubble devices with 1 &#181;m bubbles

Effects of annealing on propagation in ion-implanted contiguous-disk bubble devices

Operation temperature ranges for ion-implanted bubble devices with 1 µm bubbles