NDLI: 260 K bit Flat Domain Memory Card module

Content Provider	IEEE Xplore Digital Library
Author	Battarel, C. Hanaut, M. Fima, H.
Copyright Year	1965
Abstract	Flat domain shift registers use the propagation of domains in low coercive force. channels formed in a ferromagnetlc thin film, the magnetization lying in the plane of the film. A recent design allows to store 130Kbits per substrate with reduced electronic accessing circuits. This paper describes an experimental memory card of 260 Kbit capacity, 21×17cm in size, organized in 64 blocks of 512 bytes. All the associated electronics, block selection matrix with current drivers, sense amplifiers and interface register are implemented on the card module with standard TTL signals on the connector. The format is one 8 bit character in parallel with a maximum throughput rate of 5 Mb/s. The memory is non volatile and aynchronous, the access time to the last byte of any block is 2μs and the average access time to a randomly located byte is 0.4 ms. A preliminary cost estimate indicates a manufacturing cost of 0.1 cent/bit that could be reduced to 0.05 cent/bit with further integration of the electronics.
Sponsorship	IEEE Magnetics Society
Starting Page	889
Ending Page	892
Page Count	4
File Size	736249
File Format	PDF
ISSN	00189464
Volume Number	14
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1978-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Costs Shift registers Coercive force Thin film circuits Magnetization Substrates Driver circuits Connectors Throughput Manufacturing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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