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Content Provider | IEEE Xplore Digital Library |
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Author | Sakai, S. Suzuki, T. Yamagishi, K. |
Copyright Year | 1965 |
Abstract | A high-speed easy-rewrite read-only memory has been developed utilizing 0.1-mm plated wires with multilayered NDRO thin film 4800 Å thick. Plated wires are put into grooves molded in a plastic sheet by forming wires which are slightly larger than the plated wires. The digit sheet is sandwiched between word lines formed by two turns of a pair of copper wires. Keepers are not used because of high-speed operation. Both word and digit lines are spaced at 1.0 mm center-to-center. An average output voltage of 12 mV was obtained for a word current of 400 mA with a rise time of 15 ns. IC has been used for most of the peripheral circuits. Word lines are selected by transistor matrix. An access time of 60 ns for a memory capacity of 1024 words by 144 bits was obtained. |
Sponsorship | IEEE Magnetics Society |
Starting Page | 498 |
Ending Page | 501 |
Page Count | 4 |
File Size | 356711 |
File Format | |
ISSN | 00189464 |
Volume Number | 7 |
Issue Number | 3 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1971-09-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Read only memory Wires Voltage Copper History Transistors Testing Writing Fluctuations Debugging |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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