NDLI: Characteristics of Some Large, Coaxial Lithium-Drift Semiconductor Gamma-Ray Spectrometers

Content Provider	IEEE Xplore Digital Library
Author	Tavendale, A. J.
Copyright Year	1963
Abstract	Large-volume, lithium drift germanium and silicon diodes have been fabricated using the "coaxial" configuration and their diode and ¿-ray spectrometer characteristics investigated at liquid nitrogen temperatures (770K). Techniques are described which have been used to drift volumes up to 40 cm3 from 10 ohm-cm, Ga-doped germanium and 22 cm3 from 1100 ohm-cm, B-doped silicon. Drift data, diode d.c. conditions for best spectrometer operation, and experimental resolutions for Co-57,60 source ¿-rays are tabulated for Ge diodes, 14.5 - 40 cm3 active volume, and other sections taken from these. ¿-ray spectra up to 17 MeV ¿-ray energy are presented for typical diodes Resolutions (FWHM) of 2.0, 3.4 and 7.3 keV on the full-energy peak of 122, 1173 and 2754 keV ¿-rays have been obtained from a 14 cm3 Ge(Li) diode using a cooled, FET input stage preamplifier. The performance of a coaxial Ge(Li) diode with a guard-ring construction for high bias voltage operation is described. Coaxial Si(Li) diodes primarily intended for application as ¿-ray pair spectrometers have been drifted to 22 cm3 active volume. The spectral responses to 122 and 2754 keV ¿-rays from a smaller, 11.5 cm3 Si(Li) diode are given. Problems in drifting "single-ended" coaxial Si(Li) diode structures are discussed.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	315
Ending Page	327
Page Count	13
File Size	2408443
File Format	PDF
ISSN	00189499
Volume Number	13
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1966-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Coaxial components Spectroscopy Semiconductor diodes Germanium Silicon Energy resolution Lithium Nitrogen Temperature FETs
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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