NDLI: An Integrated Bootstrap Diode Emulator for 600-V High Voltage Gate Drive IC With P-Sub/P-Epi Technology

Content Provider	IEEE Xplore Digital Library
Author	Jing Zhu Weifeng Sun Yunwu Zhang Shengli Lu Longxing Shi Sheng Zhang Wei Su
Copyright Year	1986
Abstract	An integrated bootstrap diode emulator, including the high voltage field-effect-transistor (HV-FET), the gate control circuit and the back-gate control circuit, is experimentally proposed base on p-sub/p-epi bipolar-CMOS-DMOS technology for the first time. By adopting the gate and the back-gate control circuits, the charging time of the bootstrap capacitor can be improved by about 27% without any latch-up issues. The measured blocking voltage of the proposed HV-FET is higher than 750 V, which can be embedded in the isolation structure without sacrificing the chip area and is suitable for 600-V motor control system application. Finally, a 600-V-class high voltage gate drive IC with the proposed integrated bootstrap diode emulator is fabricated. The chip size is about 2.1 mm² and the charging duration is about 80 μs with 1-μF bootstrap capacitor.
Sponsorship	IEEE Power Electronics Society
Starting Page	518
Ending Page	523
Page Count	6
File Size	1052031
File Format	PDF
ISSN	08858993
Volume Number	31
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2016-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Threshold voltage Capacitors Voltage measurement Body regions Inverters Integrated circuits high voltage gate drive IC (HVIC) bootstrap high voltage Field-Effect-Transistor (HV-FET) Bipolar-CMOS-DMOS (BCD) high voltage field-effect-transistor (HV-FET)
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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