NDLI: Dielectric and partial discharge investigations on high power insulated gate bipolar transistor modules

Content Provider	IEEE Xplore Digital Library
Author	Arumugam, S. Gorchakov, S. Schoenemann, T.
Copyright Year	1994
Abstract	This paper investigates on dielectric condition assessment of high power Insulated Gate Bipolar Transistor (IGBT) modules through modern dielectric and diagnostic test methods. Two groups of IGBT samples (new and aged) are selected for this purpose. The new IGBT samples are grouped as 'set-1/virgin' and marked as 'A', 'B', 'C', 'D' and 'E' respectively. Amongst all, a fault (electric puncture) is introduced into the sample 'E'. The samples 'A' and 'B' are maintained virgin while samples 'C', 'D' and 'E' are subjected to partial discharge measurements as recommended by IEC60270. The samples are qualitatively ranked based on their PD level. Subsequently, the dielectric condition of each sample is measured and analyzed over a wide span and frequency. Following this, similar experiments are carried out on IGBT samples that were aged under service and their behaviour over a wide frequency is analyzed. In conclusion, the present study might provide an opportunity in improvement of diagnostic and quality control test methods that are currently exercised on IGBT modules and power conversion devices. Also, these findings enable discrimination of electrical discharges caused by IGBT modules in power conversion equipments which might help in accurate determination of their dielectric condition and reliability.
Sponsorship	National Natural Science Foundation of China (NSFC) Region Centre Ville de Tours Conseil General D'Indre et Loire ABB IEEE Sandia National Laboratories TOSHIBA
Starting Page	1997
Ending Page	2007
Page Count	11
File Size	5371481
File Format	PDF
ISSN	10709878
Volume Number	22
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Partial discharges Insulated gate bipolar transistors Dielectrics Discharges (electric) Voltage measurement Fault diagnosis dielectric loss factor IGBT partial discharge insulation resistance
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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