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What are Memristor, Memcapacitor, and Meminductor?
| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | ZhenYu Yin Heng Tian GuanHua Chen Chua, L.O. |
| Copyright Year | 2004 |
| Abstract | Memristor, memcapacitor, and meminductor are new fundamental circuit elements, whose properties depend on the history of devices. This paper presents the physical analysis of these memory devices. Three simple examples are given for the memristor, memcapacitor, and meminductor, and are then generalized to reveal their general physical origin. It is found that the memristance, memcapacitance, and meminductance are caused by different combinations of nonlinear electric responses. The mathematical expressions for the currents through any voltage-driven memristor, memcapacitor, and meminductor are given, and the corresponding expressions for the memristance, memcapacitance, and meminductance are derived. Moreover, a method to determine the charge-flux relationship of a memristor is proposed. |
| Sponsorship | IEEE Circuits and Systems Society |
| Starting Page | 402 |
| Ending Page | 406 |
| Page Count | 5 |
| File Size | 320538 |
| File Format | |
| ISSN | 15497747 |
| Volume Number | 62 |
| Issue Number | 4 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Memristors Memory devices Electric response memory device Memristor nonlinear electric response circuit element Circuit element memristor |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
