NDLI: Fabrication and Characterization of ZnO/p-Si and TiO<sub>2</sub>/p-Si Heterojunctions for Hydrogen Detection

Content Provider	IEEE Xplore Digital Library
Author	Kanungo, J. Basu, S. Sarkar, C.K.
Copyright Year	2001
Abstract	Nanocrystallyne n-ZnO and p-TiO₂ thin films were deposited on crystalline Si substrate by the simple and low-cost sol-gel method. The surfaces of nanocrystalline ZnO and TiO₂ were modified by PdCl₂ solution to passivate the defect states and to improve the gas sensitivity. Both unmodified and Pd modified sensors with Pd-Ag/n-ZnO/p-Si/Al and Pd-Ag/p-TiO₂/p-Si/Al device structures were exposed to different hydrogen concentrations (0.01%, 0.05%, 0.1%, 0.5%, and 1%) at the optimum biasing voltage and temperature. The effect of gas response was investigated using nitrogen as well as synthetic air as the carrier gas. Both the sensor configurations showed the improved gas response after surface treatment with Pd ions. Surface modified p-TiO₂ sensors recorded higher gas response (78%), response time (3 s), and recovery time (74 s) compared with ZnO sensors under the similar conditions.
Sponsorship	IEEE Sensors Council
Starting Page	6954
Ending Page	6961
Page Count	8
File Size	2598890
File Format	PDF
ISSN	1530437X
Volume Number	15
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Zinc oxide II-VI semiconductor materials Temperature sensors Gas detectors Nitrogen hydrogen sensor Nanocrystalline Zinc Oxide Titanium dioxide Pd modification zinc oxide titanium dioxide
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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