NDLI: A Dynamic Range Extension Technique for CMOS Image Sensors With In-Pixel Dual Exposure Synthesis

Content Provider	IEEE Xplore Digital Library
Author	Zhiyuan Gao Suying Yao Congjie Yang Jiangtao Xu
Copyright Year	2001
Abstract	This paper presents an in-pixel dual exposure synthesis technique to extend dynamic range of CMOS image sensors (CISs). The transfer transistor of the 4-T pixel acts as an overflow transistor in this proposed method. The full well capacity of photodiode (PD) can be very well controlled by biasing the transfer gate at different states. The long and short time exposed signals can be both stored in PD by adjusting the transfer gate voltage, and such the wide dynamic range signal can be obtained without extra readout operation. A proto chip with 64 × 48 pixel array is fabricated in 0.18-μ m CIS process. The sensor structure is based on a typical 4-T pixel image sensor with modified transfer gate driver and timing. This structure not only maintains the good features of 4-T pixels, such as good fill factor and low noise, but also achieves a wide dynamic range. The dynamic range of the proto chip is extended from 51.59 to 90.53 dB.
Sponsorship	IEEE Sensors Council
Starting Page	3265
Ending Page	3273
Page Count	9
File Size	2507469
File Format	PDF
ISSN	1530437X
Volume Number	15
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Dynamic range Noise Transistors Lighting Capacitors Photodiodes in-pixel synthesis CMOS image sensors dynamic range dual exposure
Content Type	Text
Resource Type	Article
Subject	Instrumentation Electrical and Electronic Engineering

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