NDLI: Surface Leakage Reduction in MSM InGaAs Photodetector on III

Content Provider	IEEE Xplore Digital Library
Author	Yongpeng Cheng Ikku, Y. Takenaka, M. Takagi, S.
Copyright Year	1989
Abstract	By evaluating the leakage current components of Ni/InGaAs Schottky junctions, we have revealed that the surface leakage current was dominant in the dark current of the waveguide metal-semiconductor-metal (MSM) InGaAs photodetector (PD) fabricated on the III-V CMOS photonics platform. To suppress the surface leakage, we have investigated the impact of the InAlAs Schottky barrier enhancement (SBE) layer on the surface leakage. It is found that the surface leakage can be significantly reduced by the surface passivation effect of the InAlAs SBE layer in addition to the reduction in the junction bulk leakage. We have also found that the surface passivation by an improper oxide such as Al₂O₃ on the SBE layer increased the dark current probably due to the fixed charges in the oxide layer. By introducing the InP/InAlAs SBE layer without any oxide passivation, we have successfully demonstrated the low-darkcurrent MSM InGaAs PD which was monolithically integrated with an InP photonic-wire waveguide fabricated on a III-V-on-insulator wafer. When a bias voltage of 1 V was applied, the dark current of 7 nA was obtained with 0.15 A/W responsivity for a 1550-nm wavelength.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1569
Ending Page	1572
Page Count	4
File Size	1092231
File Format	PDF
ISSN	10411135
Volume Number	27
Issue Number	14
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-07-15
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Dark current Indium phosphide Optical waveguides Photonics Aluminum oxide Schottky barrier enhancement layer MSM photodetector InGaAs III-V-on-insulator III-V-oninsulator
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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