NDLI: A Robust Bilayer Cap in Thin Film Encapsulation for MEMS Device Application

Content Provider	IEEE Xplore Digital Library
Author	Sharma, J. Jae-Wung Lee Merugu, S. Singh, N.
Copyright Year	2011
Abstract	Thin-film encapsulation (TFE) is one of the promising wafer-level packaging techniques for microelectromechanical systems (MEMS) devices. One of the drawbacks of TFE is that it is difficult to encapsulate large MEMS devices due to the downward deformation of the cap layer during the release of the TFE. This paper presents a robust bilayer cap made out of aluminum nitride (AlN)/nickel (Ni) layers, which can solve the problem of downward deformation of the cap layer. This bilayer cap provides both strength and flexibility to the TFE. This bilayer cap is simulated using ANSYS and experimentally demonstrated by encapsulating cavities as large as 1200 μm × 1200 μm with 0.5 μm AlN/0.7 μm Ni, whereas even 400 μm × 400 μm-sized TFE cannot be fabricated without cracks with a solitary 1-μm-thick AlN cap layer. Standard microfabrication processes are used for the fabrication of this bilayer cap.
Starting Page	930
Ending Page	937
Page Count	8
File Size	4368211
File Format	PDF
ISSN	21563950
Volume Number	5
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum nitride III-V semiconductor materials Nickel Micromechanical devices Stress Cavity resonators Robustness thin-film encapsulation (TFE). Bilayer capping microelectromechanical systems (MEMS) packaging release time thin-film encapsulation (TFE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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