NDLI: Comparison of Electron and Hole Mobilities in Multiple-Quantum-Well Solar Cells Using a Time-of-Flight Technique

Content Provider	IEEE Xplore Digital Library
Author	Toprasertpong, K. Tanibuchi, T. Fujii, H. Kada, T. Asahi, S. Watanabe, K. Sugiyama, M. Kita, T. Nakano, Y.
Copyright Year	2011
Abstract	Understanding of transport dynamics of both electrons and holes in quantum-structure solar cells is essential for their structure design and performance enhancement. By applying our proposed carrier time-of-flight technique on p-on-n and n-on-p configurations, we can separately evaluate electron and hole transport across quantum structures inserted in the i-region of solar cells. Electron and hole behaviors in two sets of InGaAs/GaAsP multiple-quantum-well (MQW) solar cells with different potential barrier heights are investigated in this study. Both types of carriers in In_0.21Ga_0.79As/GaAs_0.75P_0.25MQWs show faster averaged velocities by an order of magnitude than those in In_0.21Ga_0.79As/GaAs_0.59P_0.41MQWs, which have higher potential barriers. Within the same MQW structure, the measured values of electron and hole averaged velocities are very close to each other. This results in the same order of effective mobilities of electrons and holes and the similar tendency of cell performance in p-on-n and n-on-p MQW solar cells. Holes in high-barrier InGaAs/GaAsP MQWs show nonlinear mobility, suggesting that a careful design of high-barrier MQWs is required to avoid the hole bottleneck and enhance charge carrier collection.
Starting Page	1613
Ending Page	1620
Page Count	8
File Size	2264794
File Format	PDF
ISSN	21563381
Volume Number	5
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well devices Charge carrier processes Photovoltaic cells Gallium arsenide Indium gallium arsenide time-of-flight (TOF) Carrier transport charge carrier mobility measurement techniques photoluminescence (PL) photovoltaic cells quantum well devices
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Comparison of electron and hole mobilities in multiple quantum well solar cells using a time-of-flight technique

Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Multiple Quantum Well Solar Cells

Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells

Carrier sweep-out time in InGaAs/GaAsP multiple quantum well solar cells by time-resolved photoluminescence: effects of well depth and barrier thickness

Carrier generation and transport in InGaAs/GaAs multiple quantum well solar cells

Thermionic escape in quantum well solar cell

Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

Evaluation of asymmetric tunneling-assisted structure for InGaAs/GaAsP MQWs solar cell

Determining subcell carrier-collection efficiencies of triple-junction solar cells using time-resolved photoluminescence

Comparison of Electron and Hole Mobilities in Multiple-Quantum-Well Solar Cells Using a Time-of-Flight Technique

Similar Documents

Comparison of electron and hole mobilities in multiple quantum well solar cells using a time-of-flight technique

Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Multiple Quantum Well Solar Cells

Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells

Carrier sweep-out time in InGaAs/GaAsP multiple quantum well solar cells by time-resolved photoluminescence: effects of well depth and barrier thickness

Carrier generation and transport in InGaAs/GaAs multiple quantum well solar cells

Thermionic escape in quantum well solar cell

Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

Evaluation of asymmetric tunneling-assisted structure for InGaAs/GaAsP MQWs solar cell

Determining subcell carrier-collection efficiencies of triple-junction solar cells using time-resolved photoluminescence

Comparison of Electron and Hole Mobilities in Multiple-Quantum-Well Solar Cells Using a Time-of-Flight Technique