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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xin Li Gangyi Zhu Xumin Gao Dan Bai Xiaoming Huang Xun Cao Hongbo Zhu Hane, K. Yongjin Wang |
| Copyright Year | 2009 |
| Abstract | We demonstrate optoelectronic devices implemented on suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) for the further monolithic integration of an optical source, a waveguide, and a photodetector on the same GaN-on-silicon wafer. The fabricated suspended membrane device exhibits selectable functionalities either for efficient light-emitting diodes (LEDs) or sensitive photodetectors. Typical current-voltage (I-V) characteristics are obtained for the device operated under the LED mode, and the emitted light intensity is effectively modulated by the applied voltage. Lateral in-plane propagation of emitted light in a suspended membrane is experimentally presented. The simulation results show that the thickness-dependent optical performance can be tuned by back wafer thinning for epitaxial films. The device operated under the photodetector mode exhibits a static photocurrent on-off ratio ηs of 2.25 × 105 at a 1-V bias voltage with the illumination power of 690 μW and the wavelength of 450 nm. The photocurrent also shows a rectangular pulse response of the same duration as a 1-s rectangular illumination pulse at a 0-V bias voltage with the illumination power of 1 mW. The temporal photocurrent on-off ratio ηt is around 1.01 × 105. This paper opens a promising way to realize the monolithic integration of a LED, a waveguide, and a photodetector on a GaN-on-silicon platform. |
| Starting Page | 1 |
| Ending Page | 7 |
| Page Count | 7 |
| File Size | 678837 |
| File Format | |
| ISSN | 19430655 |
| Volume Number | 7 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photodetectors Light emitting diodes Gallium nitride Lighting Quantum well devices P-n junctions Silicon Photodetector Thin film devices and applications Light-emitting diodes photodetector light-emitting diodes (LEDs) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering |
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