NDLI: Surface Effects of Space Radiation on Silicon Devices

Content Provider	IEEE Xplore Digital Library
Author	Hughes, H. L.
Copyright Year	1963
Abstract	Experimental study indicates that a significant contribution to the radiation-sensitivity of certain contemporary silicon planar transistors is caused by space-charge modifications in the oxide surface region. Certain silicon planar transistors, which are inherently passivated and protected by a silicon dioxide surface layer, have been found to realize appreciable degradation after exposure to space-type ionizing radiation. The model of radiation surface-effects proposed in the literature claims the radiation-induced ionization of the ambient gas of the transistor to be the major cause of transistor radiation-sensitivity. Contrary to this model, silicon planar transistors irradiated in an ultra-high vacuum environment realize comparable changes in electrical charactw. istics to those silicon planar transistors irradiated in gaseous ambients. Since the degradation occurs at radiation doses as low as 104 rads and is dependent upon the polarity and magnitude of electrical bias, it has been determined to be a surfa. ce effect. In order to study the effects of radiation on the silicon-silicon dioxide interface, a metal-oxide-semiconductor (MOS) structure was used. From the capacitance versus voltage characteristics of irradiated MOS transistors it has been confirmed that a major contribution to the radiation-surface degradation in silicon planar devices is the buildup of positive space charge in the silicon dioxide films covering the silicon-device surfaces. This space charge is mobile and able to drift by motion in electric fields. This positive charge can be accumulated at certain areas of the surface causing the silicon surf ace to have a tendency to go n type.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	53
Ending Page	63
Page Count	11
File Size	4075795
File Format	PDF
ISSN	00189499
Volume Number	12
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1965-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon devices Ionizing radiation Degradation Silicon compounds Space charge Protection Ionization Capacitance-voltage characteristics Voltage MOSFETs
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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