NDLI: Increased Efficiency of Silicon Light-Emitting Device in Standard Si-CMOS Technology

Content Provider	IEEE Xplore Digital Library
Author	Kaikai Xu Qi Yu Guannpyng Li
Copyright Year	1965
Abstract	Light emission has been observed from silicon devices in the reverse avalanche mode. Compared with Si-diode light-emitting device (LED) (a two-terminal device), Si-pMOSFET LED (a three-terminal device) in which the optical emission power emitted from the device is controlled by the insulated-gate terminal's voltage V_g has been discussed. Being similar to Si-diode LED, Si-pMOSFET LED can also be monolithically integrated into optical-electro integrated circuit that is fully compatible with the silicon CMOS process technology. Light emission efficiency enhancement observed at lower electric driving power in the Si-pMOSFET LED is presented, and the reverse-biased junction configuration of the silicon LED emit light in a broad spectrum from 450 to 800 nm with characteristic peaks around ~650 nm.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1
Ending Page	6
Page Count	6
File Size	1554415
File Format	PDF
ISSN	00189197
Volume Number	51
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Silicon Light emitting diodes Stimulated emission P-n junctions Substrates semiconductor integrated optoelectronics Silicon light emitting device emission efficiency
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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