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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhao-Bing Tian Krishna, S. |
| Copyright Year | 1965 |
| Abstract | We report an experimental investigation on the influence of absorber thicknesses in mid-infrared interband cascade (IC) photodetectors. The electrical and optical properties of these five-stage IC detectors are characterized in detail over a wide operating temperature range. The IC detectors are operational above 400 K under zero bias, with a 50% cutoff of 4.56 μm and external quantum efficiency (single pass, no antireflection coating) up to 10.1% at room temperature. The dark current in the IC detectors is at 10 μA/cm2 at -10 mV, with a Johnson-limited D* of 1.10 × 1011 Jones at 200 K. Our experimental results show that both the optical response and the noise performance in the quantum-engineered IC detectors improve with increased discrete absorber thicknesses. It is also suggested that the dark current in the IC detectors is determined by tunneling components at lower temperatures, and becomes diffusion-limited at higher temperatures. |
| Sponsorship | IEEE Lasers and Electro-Optics Society |
| Starting Page | 1 |
| Ending Page | 5 |
| Page Count | 5 |
| File Size | 1562083 |
| File Format | |
| ISSN | 00189197 |
| Volume Number | 51 |
| Issue Number | 4 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Integrated circuits Detectors Dark current Temperature Photodetectors Optical detectors Integrated optics type-II superlattices mid-infrared photodetectors quantum wells Mid-infrared |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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