NDLI: Junctionless Silicon and In<sub>0.53</sub>Ga<sub>0.47</sub>As Transistors—Part II: Device Variability From Random Dopant Fluctuation

Content Provider	IEEE Xplore Digital Library
Author	Leung, G. Pan, A. Chi On Chui
Copyright Year	1963
Abstract	Random dopant fluctuation (RDF) variability in nanoscale junctionless FETs (JLFETs) utilizing either Si or In_0.53Ga_0.47As channels has been studied using technology computer-aided design (TCAD) simulations. The 15nm node Si and InGaAs JLFETs are equivalently designed and calibrated using nonequilibrium Green's function simulations for statistical TCAD analysis. We find that n-InGaAs JLFETs exhibit reduced RDF variability compared with n-Si JLFETs in terms of threshold voltage, subthreshold swing, and drain-induced barrier lowering as a result of high degeneracy effects. By contrast, the variability of p-InGaAs JLFETs is comparable with that of n- and p-Si JLFETs because of the larger valence band density of states (DOS). The normalized variations in ON-state drive current are roughly equal (~16%) for all device types, because the major effects of degenerate screening on current transport effectively cancel one another. From these results, we find that high carrier degeneracy in small DOS materials can have a significant effect on the electrostatic integrity of JLFETs in the presence of RDF (especially in subthreshold), and that degenerately doped n-InGaAs devices are slightly (and inherently) more immune to RDF compared with Si JLFETs.
Sponsorship	IEEE Electron Devices Society
Starting Page	3208
Ending Page	3214
Page Count	7
File Size	2841751
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Silicon Resource description framework Doping Slabs Semiconductor process modeling Electric potential variability. Degeneracy InGaAs junctionless FET (JLFET) nonequilibrium Green's functions (NEGF) random dopant fluctuation (RDF) screening short-channel effects variability nonequilibrium Green’s functions (NEGF)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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