NDLI: Carrier Recombination Lifetime Measurement in Silicon Epitaxial Layers Using Optically Excited MOS Capacitor Technique

Content Provider	IEEE Xplore Digital Library
Author	Khorasani, A.E. Schroder, D.K. Alford, T.L.
Copyright Year	1963
Abstract	Carrier recombination lifetime is a key semiconductor parameter that not only has a major role in how a variety of solid-state devices operate, but one that can also be used as a process cleanliness monitoring tool. Lifetime measurement on epitaxial wafers, where the epilayer thickness is smaller than the minority carrier's diffusion length, has always been a challenging task. Although the pulsed MOS capacitor has been shown to be an eminently suitable technique for measuring the generation lifetime (τ_g) on these wafers, measuring the recombination lifetime (τ_r) yet has remained complicated and difficult to implement. In this paper, a new technique for accurate measurement of τ_r will be presented. Lifetime will be extracted from the capacitance transient (C-t) of an inverted MOS device while being excited by an optical pulse. In addition to its easy implementation, the recombination lifetime extracted this way is least affected by Si/SiO₂ surface and epi/substrate interface effects when compared with older techniques such as the photoconductance decay. TCAD simulations and experimental results will be presented to demonstrate the promising application of the optically excited MOS to the characterization of p/p⁺ silicon epitaxial layers.
Sponsorship	IEEE Electron Devices Society
Starting Page	1553
Ending Page	1560
Page Count	8
File Size	1594168
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance Logic gates Radiative recombination Pollution measurement Semiconductor device measurement Silicon silicon. Epitaxial layers metallic contamination MOS capacitor recombination lifetime semiconductor defects semiconductor device measurements semiconductor materials silicon
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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