NDLI: Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Content Provider	IEEE Xplore Digital Library
Author	Nadda, K. Kumar, M.J.
Copyright Year	2005
Abstract	A lateral polysilicon Bipolar Charge Plasma Transistor (poly-Si BCPT) on undoped recrystallized polycrystalline silicon which is compatible with the thin-film field effect transistor (TFT) fabrication is reported in this paper. Using calibrated two-dimensional device simulation, the electrical performance of the poly-Si BCPT is evaluated in detail by considering the position of the single grain boundary. Our simulation results demonstrate that the poly-Si BCPT has the potential to realize low-cost thin-film polycrystalline silicon bipolar transistors with large current gain and cut-off frequency making it suitable for a number of applications including the driver circuits of the displays.
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	590
Ending Page	594
Page Count	5
File Size	749627
File Format	PDF
ISSN	1551319X
Volume Number	10
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Silicon Bipolar transistors Grain boundaries Integrated circuit modeling Films thin-film transistors (TFTs) Bipolar charge plasma transistor (BCPT) bipolar transistor current gain glass substrates poly-Si simulation
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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