NDLI: A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device

Content Provider	IEEE Xplore Digital Library
Author	Ghosh, H.N.
Copyright Year	1963
Abstract	A distributed model for a junction transistor has been analyzed to include both dc and ac biasing effects in the active base region, with particular emphasis on a small-geometry diffused base planar transistor. For such devices with extremely narrow base width, dc biasing effects cannot be neglected. At high frequencies, the response of these devices is greatly modified by ac biasing effects which are accentuated by the significant dc biasing at large emitter current levels. Two-dimensional current flow under these biasing conditions was studied with a distributed model of the active base region. From such a model, the expressions for emitter-base diode characteristic, small-signal and large-signal base resistance, and complex base impedance valid for high frequencies have been deduced in terms of physical parameters of the devices like the geometry, base resistivity, etc. This equivalent base impedance and an ideal diode with its diffusion and emitter-base transition capacitance constitute the lumped model of the emitter-base region. For any particular frequency, the base impedance can be represented exactly by a parallel RC network. The distributed model can also predict the pulse response of the device more accurately than a lumped model and show the sensitivity of the transient response to the physical parameters mentioned above. Experimental verifications of the theoretical expressions are found to be satisfactory, and limitations of the earlier works are pointed out in regard to present devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	513
Ending Page	531
Page Count	19
File Size	1281969
File Format	PDF
ISSN	00189383
Volume Number	12
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1965-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Base Charge Dynamics of Abrupt Base–Emitter Junction HBTs and Its Representation in Transistor Models

The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries

Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs

Recombination centers in silicon transistor emitter-base junctions

Distributed-constant theory of the junction transistor

Current transport mechanism at the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE

Peripheral emitter—Base junction capacitance in bipolar transistors

LED Pulse response analysis considering the distributed CR constant in the peripheral junction

Bipolar transistor with minimized collector-to-base junction area

A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device

Similar Documents

Base Charge Dynamics of Abrupt Base–Emitter Junction HBTs and Its Representation in Transistor Models

The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries

Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs

Recombination centers in silicon transistor emitter-base junctions

Distributed-constant theory of the junction transistor

Current transport mechanism at the emitter-base junction of an n-p-n GaAs/GaAlAs heterojunction bipolar transistor prepared by MBE

Peripheral emitter&#8212;Base junction capacitance in bipolar transistors

LED Pulse response analysis considering the distributed CR constant in the peripheral junction

Bipolar transistor with minimized collector-to-base junction area

A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device

Peripheral emitter—Base junction capacitance in bipolar transistors