NDLI: High-speed photodiode signal enhancement at avalanche breakdown voltage

Content Provider	IEEE Xplore Digital Library
Author	Johnson, K.M.
Copyright Year	1963
Abstract	It has previously been found that when photons are injected into a photodiode biased to the avalanche region, that there is a multiplication of the signal over the usual bias-voltage signal level. This multiplication is due to the created electron-hole pairs colliding with the lattice and creating more electron-hole pairs under the influence of the large biasing field. This paper presents a circuit analysis of this effect when using a high-speed silicon (Si) P-I-N photodiode and shows what the SNR bandwidth and Noise Equivalent Power (NEP) are under both normal bias conditions and avalanche bias conditions. It is shown that there is a substantial improvement in the NEP and SNR ratio at high frequencies when operating at avalanche so that the device may be made nearly shot noise limited if the multiplication factorMis sufficiently large. Microwave measurements on such a high-speed diode gave gains greater than 30 dB with a SNR improvement of 13 dB at 1.45 Gc/s. The effect was observed at frequencies as high as 2.54 Gc/s and appeared to follow a linear 1/M law with bias voltage in the avalanche region with some deviation at large values ofM. The device SNR ratio at moderately high light levels is determined by the signal-to-shot noise ratio. A high modulation depth is found to be essential to reduce shot noise. Analysis of the diode circuit reveals that the detected signal power bandwidth product is a constant. The NEP is found to vary directly with the bandwidth in a pulse type system. Avalanche operation increases the signal power by M²and decreases the NEP byMat high frequencies. The photodiode appears to nearly provide the solid-state analog of the photomultiplier tube.
Sponsorship	IEEE Electron Devices Society
Starting Page	55
Ending Page	63
Page Count	9
File Size	1103744
File Format	PDF
ISSN	00189383
Volume Number	12
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1965-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Correction [to High speed photodiode signal enhancement at avalanche breakdown voltage]

IIIb-2 high speed GaAs avalanche photodiode

TA-B2 GaAlSb and GaAlAsSb high-speed avalanche photodiode

Evaluation of a Junction Termination Extension Avalanche Photodiode for X-Ray Detection

Avalanche breakdown in high-voltage D-MOS devices

Effect of dead space on avalanche speed [APDs]

Ultra-Low-Noise Sinusoidally Gated Avalanche Photodiode for High-Speed Single-Photon Detection at Telecommunication Wavelengths

An optimized avalanche photodiode

Avalanche photodiode frequency response

High-speed photodiode signal enhancement at avalanche breakdown voltage

Similar Documents

Correction [to High speed photodiode signal enhancement at avalanche breakdown voltage]

IIIb-2 high speed GaAs avalanche photodiode

TA-B2 GaAlSb and GaAlAsSb high-speed avalanche photodiode

Evaluation of a Junction Termination Extension Avalanche Photodiode for X-Ray Detection

Avalanche breakdown in high-voltage D-MOS devices

Effect of dead space on avalanche speed [APDs]

Ultra-Low-Noise Sinusoidally Gated Avalanche Photodiode for High-Speed Single-Photon Detection at Telecommunication Wavelengths

An optimized avalanche photodiode

Avalanche photodiode frequency response

High-speed photodiode signal enhancement at avalanche breakdown voltage