NDLI: A Microdischarge-Based Monolithic Pressure Sensor

Content Provider	IEEE Xplore Digital Library
Author	Eun, C.K. Xin Luo Jun-Chieh Wang Zhongmin Xiong Kushner, M. Gianchandani, Y.
Copyright Year	1992
Abstract	This paper describes the investigation of a microdischarge-based approach for sensing the diaphragm deflection in a monolithically fabricated pressure sensor. This transduction approach is appealing from the viewpoint of miniaturization. The device consists of a deflecting Si diaphragm with a sensing cathode, and a glass substrate with an anode and a reference cathode. The total exterior volume of the device is 0.05 mm³; typical electrode size and separations are 35 and 10 mm³. Pulsed microdischarges are initiated in a sealed chamber formed between Si and glass chips, and are filled with Ar gas. External pressure deflects the Si diaphragm and changes the interelectrode spacing, thereby redistributing the current between the anode and two competing cathodes. The differential current is indicative of the diaphragm deflection which is determined by the external pressure. A 6-mask microfabrication process is investigated for device fabrication. Electrode connections to the interior of the chamber are provided by laser drilling and copper electroplating through high aspect ratio glass vias. The Si and glass substrates are bonded by Au-In eutectic. The redistribution of plasma current between competing cathodes, as a consequence of diaphragm deflection over a range of pressure, was experimentally demonstrated. First principles modeling of transient microdischarges have provided insights to the fundamental processes responsible for the differential current and guidance for scaling the device to smaller dimension.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1300
Ending Page	1310
Page Count	11
File Size	3040941
File Format	PDF
ISSN	10577157
Volume Number	23
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Monolithic integrated circuits Pressure measurement Cathodes Microfabrication Thermal factors Sensors plasma modeling. Through-glass vias (TGVs) electroplating eutectic bonding plasma modeling
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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