NDLI: Clarification of Stress Field Measured by Multiwavelength Micro-Raman Spectroscopy in the Surrounding Silicon of Copper-Filled Through-Silicon Vias

Content Provider	IEEE Xplore Digital Library
Author	Yuen Sing Chan Xiaowu Zhang
Copyright Year	2011
Abstract	Recently, micro-Raman spectroscopy has become popular in the near-surface silicon stress measurement around copper-filled through-silicon vias. Because the stress σ_Raman measured by the micro-Raman spectroscopy is a combined result of all of the stress components, interpretation of this stress becomes obscure. Ryu et al. has claimed that σ_Raman is approximately biaxial and hence it is proportional to σ_r + σ_θ. On the other hand, Wilson et al. has claimed that σ_r + σ_θ should be close to zero and hence σ_Raman is directly proportional to σ_z. In view of the dilemma as proposed by different research groups, this paper aims to provide insight into the origin of this stress so that it can be understood and used properly.
Starting Page	1010
Ending Page	1014
Page Count	5
File Size	2231599
File Format	PDF
ISSN	21563950
Volume Number	4
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Stress measurement Through-silicon vias Spectroscopy Silicon Copper Packaging stress measurement. Copper-filled through-silicon vias (TSVs) finite element analysis (FEA) micro-Raman spectroscopy stress measurement
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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