NDLI: Pseudo Shunts Interfering Lock-In Thermography Investigations of Solar Cells: Characterization and Prevention

Content Provider	IEEE Xplore Digital Library
Author	Bauer, J. Wagele, L.A. Gase, K. Breitenstein, O.
Copyright Year	2011
Abstract	Pseudo shunts are artifacts, which may occur during lock-in thermography (LIT) measurements of solar cells. They are caused at the interface between the solar cell and the sample holder or at current feed-in points and may affect LIT investigations detrimentally, leading to misinterpretation of LIT images. The apparent current density-voltage ( J-V) characteristics of pseudo shunts show a significantly steeper slope than that of real shunts, and even of good parts of the cell, and cannot be fitted by the common one- or two-diode models. The cause of pseudo shunts is found to be a local contact on the backside of wafer-based silicon solar cells to the chuck, surrounded by a noncontacted region. A method is proposed to prevent the appearance of pseudo shunts.
Starting Page	1429
Ending Page	1432
Page Count	4
File Size	412370
File Format	PDF
ISSN	21563381
Volume Number	4
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Shunts (electrical) Current density Density measurement Thermal analysis thermal analysis Artifacts lock-in thermography photovoltaic cells shunts
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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