NDLI: Amorphous Ge Passivation Effects on Ge Solar Cells

Content Provider	IEEE Xplore Digital Library
Author	Chih-Hung Wu Chih-An Hsu Chih-Chao Yang
Copyright Year	2011
Abstract	Amorphous Ge (α-Ge) deposited from a high purity Ge source was adopted to study the passivation applications for Ge solar cells. The measured results indicate that postannealing treatment onto the solar cell with α-Ge plays an important role in determining the solar cell performance. For samples with α-Ge and a GaAs contact layer outside the front metal grid region, more than one-order decrease of dark current can be obtained after conducting a postannealing step at 300 °C for 2-10 min. In addition, solar cell performance characteristics are dramatically improved with 1-sun V_oc from 0.035 to 0.16 V, J_sc from 16.1 mA/cm ² to 27 mA/cm ² , fill factor from 0.17 to 0.40, and efficiency η from 0.1% to 1.7% after completing the postannealing process. Furthermore, after removing the GaAs contact layer outside the front metal-grid region, solar cells with α-Ge show 1-sun efficiency 1.19% (6.54% versus 5.35%) and fill factor 0.14 (0.68 versus 0.54) higher than those samples without α-Ge, which correspond to 22.2% and 25% relative increase in the efficiency and the fill factor, respectively.
Starting Page	968
Ending Page	971
Page Count	4
File Size	430156
File Format	PDF
ISSN	21563381
Volume Number	4
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Passivation Metals Gallium arsenide Silicon Dark current passivation Amorphous germanium dark current Ge solar cell
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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